Invention Grant
- Patent Title: Dual-precision analog memory cell and array
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Application No.: US17308675Application Date: 2021-05-05
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Publication No.: US11551739B2Publication Date: 2023-01-10
- Inventor: Zhichao Lu , Liang Zhao
- Applicant: HEFEI RELIANCE MEMORY LIMITED
- Applicant Address: CN Hefei
- Assignee: HEFEI RELIANCE MEMORY LIMITED
- Current Assignee: HEFEI RELIANCE MEMORY LIMITED
- Current Assignee Address: CN Hefei
- Agency: Sheppard Mullin Richter & Hampton LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/22 ; G06N5/04 ; G11C11/56 ; G06N3/06 ; G11C11/4074

Abstract:
Dual-precision analog memory cells and arrays are provided. In some embodiments, a memory cell, comprises a non-volatile memory element having an input terminal and at least one output terminal; and a volatile memory element having a plurality of input terminals and an output terminal, wherein the output terminal of the volatile memory element is coupled to the input terminal of the non-volatile memory element, and wherein the volatile memory element comprises: a first transistor coupled between a first supply and a common node, and a second transistor coupled between a second supply and the common node; wherein the common node is coupled to the output terminal of the volatile memory element; and wherein gates of the first and second transistors are coupled to respective ones of the plurality of input terminals of the volatile memory element.
Public/Granted literature
- US20210257014A1 DUAL-PRECISION ANALOG MEMORY CELL AND ARRAY Public/Granted day:2021-08-19
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