- 专利标题： Fan-out package and methods of forming thereof
-
申请号： US16989466申请日： 2020-08-10
-
公开(公告)号： US11532577B2公开(公告)日： 2022-12-20
- 发明人: Wan-Ting Shih , Nai-Wei Liu , Jing-Cheng Lin , Cheng-Lin Huang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/00 ; H01L23/498 ; H01L23/538 ; H01L23/31 ; H01L21/56
摘要：
An embodiment is a method including depositing a first dielectric layer over a molding compound and a chip and patterning a first opening in the first dielectric layer to expose a contact of the chip. A first metallization layer is deposited over the first dielectric layer and in the first opening, where a portion of the first metallization layer in the first opening has a flat top. A second dielectric layer is deposited over the first metallization layer and the first dielectric layer. A second metallization layer is deposited in a second opening in the second dielectric layer, where the second metallization layer does not have a flat top within the second opening.
公开/授权文献
- US20200373264A1 Fan-Out Package and Methods of Forming Thereof 公开/授权日：2020-11-26
信息查询
IPC分类:
