- 专利标题: Neuron circuit using p-n-p-n diode without external bias voltages
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申请号: US16896560申请日: 2020-06-09
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公开(公告)号: US11531872B2公开(公告)日: 2022-12-20
- 发明人: Sang Sig Kim , Kyoung Ah Cho , Young Soo Park , Doo Hyeok Lim , Sol A Woo
- 申请人: Korea University Research and Business Foundation
- 申请人地址: KR Seoul
- 专利权人: Korea University Research and Business Foundation
- 当前专利权人: Korea University Research and Business Foundation
- 当前专利权人地址: KR Seoul
- 代理机构: NSIP Law
- 优先权: KR10-2019-0145945 20191114
- 主分类号: G06N3/063
- IPC分类号: G06N3/063 ; H01L29/74 ; H03K17/72 ; H01L29/749
摘要:
The present disclosure relates to a novel neuron circuit using a p-n-p-n diode to realize small size and low power consumption. The neuron circuit according to one embodiment of the present disclosure may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a critical value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor.
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