- 专利标题： Positive-working photoresist composition, pattern produced therefrom, and method for producing pattern
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申请号： US16498829申请日： 2018-07-25
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公开(公告)号： US11531268B2公开(公告)日： 2022-12-20
- 发明人: Min Young Lim , Tae Seob Lee , Ji Hye Kim
- 申请人： LG CHEM, LTD.
- 申请人地址： KR Seoul
- 专利权人： LG CHEM, LTD.
- 当前专利权人： LG CHEM, LTD.
- 当前专利权人地址： KR Seoul
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权： KR10-2017-0097280 20170731
- 国际申请： PCT/KR2018/008431 WO 20180725
- 国际公布： WO2019/027181 WO 20190207
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/30 ; G03F7/033
摘要：
The present invention provides a positive photoresist composition having excellent storage stability, sensitivity, developing properties, plating resistance, and heat resistance. More specifically, a specific dissolution inhibitor in the form of an oligomer having the same repeating unit structure as the resin contained in the photoresist composition is applied to said composition.
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