- 专利标题: Light irradiation type heat treatment method and heat treatment apparatus that calculates a temperature of a substrate based on a treatment recipe applicable thereto
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申请号: US16699812申请日: 2019-12-02
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公开(公告)号: US11516884B2公开(公告)日: 2022-11-29
- 发明人: Tomohiro Ueno , Takayuki Aoyama , Mao Omori , Takahiro Kitazawa , Katsuichi Akiyoshi
- 申请人: SCREEN Holdings Co., Ltd.
- 申请人地址: JP Kyoto
- 专利权人: SCREEN Holdings Co., Ltd.
- 当前专利权人: SCREEN Holdings Co., Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Ostrolenk Faber LLP
- 优先权: JPJP2018-232317 20181212,JPJP2018-232468 20181212
- 主分类号: H05B1/02
- IPC分类号: H05B1/02 ; H05B3/00 ; H01L21/67 ; F27D21/00
摘要:
A carrier containing a plurality of semiconductor wafers in a lot is transported into a heat treatment apparatus. Thereafter, a recipe specifying treatment procedures and treatment conditions is set for each of the semiconductor wafers. Next, a reflectance of each of the semiconductor wafers stored in the carrier is measured. Based on the set recipe and the measured reflectance of each semiconductor wafer, a predicted attainable temperature of each semiconductor wafer at the time of flash heating treatment is calculated, and the calculated predicted attainable temperature is displayed. This allows the setting of the treatment conditions with reference to the displayed predicted attainable temperature, to thereby easily achieve the setting of the heat treatment conditions.
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