- 专利标题： Protective layer for contact pads in fan-out interconnect structure and method of forming same
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申请号： US16934631申请日： 2020-07-21
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公开(公告)号： US11515288B2公开(公告)日： 2022-11-29
- 发明人: Chin-Chuan Chang , Tsei-Chung Fu , Jing-Cheng Lin
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L23/00 ; H01L23/522 ; H01L23/31
摘要：
A method includes providing a die having a contact pad on a top surface and forming a conductive protective layer over the die and covering the contact pad. A molding compound is formed over the die and the conductive protective layer. The conductive protective layer is exposed using a laser drilling process. A redistribution layer (RDL) is formed over the die. The RDL is electrically connected to the contact pad through the conductive protective layer.
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