- 专利标题： Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters
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申请号： US17007684申请日： 2020-08-31
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公开(公告)号： US11495632B2公开(公告)日： 2022-11-08
- 发明人: Kuo-Cheng Lee , Yun-Wei Cheng , Yung-Lung Hsu , Hsin-Chi Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
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