- 专利标题: Dual-band transformer structure
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申请号: US16874858申请日: 2020-05-15
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公开(公告)号: US11418223B2公开(公告)日: 2022-08-16
- 发明人: Tzu-Hao Hsieh , Chih-Chieh Wang
- 申请人: Realtek Semiconductor Corporation
- 申请人地址: TW Hsinchu
- 专利权人: Realtek Semiconductor Corporation
- 当前专利权人: Realtek Semiconductor Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: Locke Lord LLP
- 代理商 Tim Tingkang Xia, Esq.
- 优先权: TW108128988 20190814
- 主分类号: H04B1/00
- IPC分类号: H04B1/00 ; H03H7/46
摘要:
The present disclosure provides a dual-band transformer structure, which is suitable for at least two frequencies. The dual-band transformer structure includes a metal layer, a first transmission line, a second transmission line, and a third transmission line. The first transmission line and the second transmission line are disposed on the metal layer. A first end of the second transmission line is coupled to a second end of the first transmission line. A second end of the second transmission line is aligned with an edge of the metal layer, and a first end of the third transmission line is coupled to the second end of the second transmission line. The third transmission line extends away from the edge.
公开/授权文献
- US20210050871A1 DUAL-BAND TRANSFORMER STRUCTURE 公开/授权日:2021-02-18
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