- 专利标题: Thin film transistor and method for manufacturing same, array substrate, display panel and display device
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申请号: US16063743申请日: 2017-12-12
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公开(公告)号: US11417769B2公开(公告)日: 2022-08-16
- 发明人: Binbin Cao , Chao Wang , Lin Sun
- 申请人: BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- 申请人地址: CN Beijing; CN Hefei
- 专利权人: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- 当前专利权人: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- 当前专利权人地址: CN Beijing; CN Hefei
- 代理机构: Fay Sharpe LLP
- 优先权: CN201710329780.8 20170511
- 国际申请: PCT/CN2017/115638 WO 20171212
- 国际公布: WO2018/205596 WO 20181115
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/02 ; H01L21/467 ; H01L27/12 ; H01L29/66
摘要:
Provided are a thin film transistor and method for manufacturing the same, array substrate, display panel and display device. The thin film transistor includes: a gate pattern, a gate insulating layer, an active layer pattern, a source pattern and a drain pattern sequentially stacked. At least one of a surface of the source pattern facing the gate insulating layer, a surface of the drain pattern facing the gate insulating layer, and a surface of the gate pattern facing the gate insulating layer is a target surface which can diffusely reflect lights entering the target surface, to prevent part of the lights from entering the active layer pattern. The display device solves the problem of volt-ampere characteristic curve of the active layer pattern being deflected and a normal operation of the thin film transistor being affected, thereby weakening the influence of lights on the normal operation of the thin film transistor.
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