- 专利标题: Metal-insulator metal structure and method of forming the same
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申请号: US16445290申请日: 2019-06-19
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公开(公告)号: US11417723B2公开(公告)日: 2022-08-16
- 发明人: Gwenael Le Rhun , Christel Dieppedale
- 申请人: Commissariat A L'Energie Atomique et aux Energies Alternatives
- 申请人地址: FR Paris
- 专利权人: Commissariat A L'Energie Atomique et aux Energies Alternatives
- 当前专利权人: Commissariat A L'Energie Atomique et aux Energies Alternatives
- 当前专利权人地址: FR Paris
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: FR1855595 20180622
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; H01L41/312 ; H01L41/187
摘要:
A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.
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