- 专利标题： Manufacturing method of semiconductor device
-
申请号： US17006958申请日： 2020-08-31
-
公开(公告)号： US11417626B2公开(公告)日： 2022-08-16
- 发明人: Mie Matsuo , Hideshi Miyajima
- 申请人： Kioxia Corporation
- 申请人地址： JP Minato-ku
- 专利权人： Kioxia Corporation
- 当前专利权人： Kioxia Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2019-165648 20190911
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L23/00 ; H01L25/18 ; H01L25/00
摘要：
In a manufacturing method of a semiconductor device according to an embodiment, a first substrate having a first elastic modulus is joined onto a second substrate having a second elastic modulus higher than the first elastic modulus. A first semiconductor element is formed on the first substrate. The first substrate is detached from the second substrate.
公开/授权文献
- US20210074672A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2021-03-11
信息查询
IPC分类:
