- 专利标题： Two-dimensional AIN material and its preparation method and application
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申请号： US16980059申请日： 2018-04-26
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公开(公告)号： US11417522B2公开(公告)日： 2022-08-16
- 发明人: Wenliang Wang , Guoqiang Li , Yulin Zheng
- 申请人： South China University of Technology
- 申请人地址： CN Guangzhou
- 专利权人： South China University of Technology
- 当前专利权人： South China University of Technology
- 当前专利权人地址： CN Guangzhou
- 代理机构： The Dobrusin Law Firm, PC
- 优先权： CN201810233105.X 20180321
- 国际申请： PCT/CN2018/084543 WO 20180426
- 国际公布： WO2019/178916 WO 20190926
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L31/18 ; H01L29/778 ; C23C16/02 ; C23C16/30 ; C30B25/18 ; C30B29/40
摘要：
The present invention discloses a two-dimensional AlN material and its preparation method and application, wherein the preparation method comprises the following steps: (1) selecting a substrate and its crystal orientation; (2) cleaning the surface of the substrate; (3) transferring a graphene layer to the substrate layer; (4) annealing the substrate; (5) using the MOCVD process to introduce H2 to open the graphene layer and passivate the surface of the substrate; and (6) using the MOCVD process to grow a two-dimensional AlN layer. The preparation method of the present invention has the advantages that the process is simple, time saving and efficient. Besides, the two-dimensional AlN material prepared by the present invention can be widely used in HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs, and other fields.
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