- 专利标题: Reserved rows for row-copy operations for semiconductor memory devices and associated methods and systems
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申请号: US17013520申请日: 2020-09-04
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公开(公告)号: US11417387B2公开(公告)日: 2022-08-16
- 发明人: Randall J. Rooney
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: G11C11/408
- IPC分类号: G11C11/408 ; G11C11/4096 ; G11C11/4091 ; G11C11/4093
摘要:
Methods, systems, and apparatuses for memory devices (e.g., DRAM) including one or more reserved rows for row-copy operations are described. Such a memory device may include a memory array having a set of rows, where one or more rows of the set are reserved for row-copy operations and hidden (un-addressable) from access commands directed to the memory array. The reserved rows may include a dummy row configured to provide a uniform processing conditions to the memory array. Additionally, or alternatively, the reserved rows may include a buffer row configured to provide a buffer zone in the memory array. In some embodiments, the memory device may perform the row-copy operations in response to detecting row hammering activities. The row-copy operations may mitigate the risks associated with the row hammering activities by routing the row hammering activities to the reserved rows.
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