- 专利标题： Manufacturing method of sensor in an internet-of-things
-
申请号： US16706054申请日： 2019-12-06
-
公开(公告)号： US11414763B2公开(公告)日： 2022-08-16
- 发明人: Ming-Ta Lei , Chia-Hua Chu , Hsin-Chih Chiang , Tung-Tsun Chen , Chun-Wen Cheng
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： G01N33/00
- IPC分类号： G01N33/00 ; G01N27/12 ; C23F4/00
摘要：
The present disclosure provides a method of manufacturing a gas sensor. The method includes the following operations: a substrate is received; a conductor layer is formed over the substrate; the conductor layer is patterned to form a conductor with a plurality of openings by an etching operation, the openings being arranged in a repeating pattern, a minimal dimension of the opening being about 4 micrometers; and a gas-sensing film is formed over the conductor.
信息查询
