- 专利标题: Potentiostat circuit
-
申请号: US16670131申请日: 2019-10-31
-
公开(公告)号: US11381205B2公开(公告)日: 2022-07-05
- 发明人: Moez Kanoun
- 申请人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 申请人地址: US AZ Phoenix
- 专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理机构: Brake Hughes Bellermann LLP
- 主分类号: H03F3/04
- IPC分类号: H03F3/04 ; G01N27/49 ; G01N27/416
摘要:
A potentiostat circuit for controlling a work electrode voltage and for measuring a work electrode current is disclosed. The disclosed potentiostat circuit implementations have a topology and include elements to provide a plurality of benefits. The plurality of benefits includes an enlarged range of controllable work electrode voltages and bidirectional work electrode current measurements, high immunity from temperatures variations and process mismatch. The disclosed potentiostat circuit implementations can be used in applications requiring accuracy, low power consumption, and small size. The applications can include portable and/or multichannel electrochemical applications.
公开/授权文献
- US20210091728A1 POTENTIOSTAT CIRCUIT 公开/授权日:2021-03-25
信息查询