- 专利标题： Etching method and apparatus
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申请号： US16825227申请日： 2020-03-20
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公开(公告)号： US11373874B2公开(公告)日： 2022-06-28
- 发明人: Nobuhiro Takahashi , Ayano Hagiwara , Yasuo Asada , Tatsuya Yamaguchi
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Fenwick & West LLP
- 优先权： JPJP2019-066761 20190329
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/3065 ; H01L21/308
摘要：
An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.
公开/授权文献
- US20200312669A1 ETCHING METHOD AND APPARATUS 公开/授权日：2020-10-01
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