- 专利标题: Composite etch stop layers for sensor devices
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申请号: US16845005申请日: 2020-04-09
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公开(公告)号: US11335817B2公开(公告)日: 2022-05-17
- 发明人: Cheng-Han Lin , Chao-Ching Chang , Yi-Ming Lin , Yen-Ting Chou , Yen-Chang Chen , Sheng-Chan Li , Cheng-Hsien Chou
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Maschoff Brennan
- 主分类号: H01L31/0216
- IPC分类号: H01L31/0216 ; H01L31/18 ; H01L27/146 ; H01L31/0232
摘要:
A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
公开/授权文献
- US20210050460A1 COMPOSITE ETCH STOP LAYERS FOR SENSOR DEVICES 公开/授权日:2021-02-18
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