- 专利标题: Tantalum capacitor and manufacturing method thereof
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申请号: US16876343申请日: 2020-05-18
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公开(公告)号: US11315738B2公开(公告)日: 2022-04-26
- 发明人: Hun Chol Jung , Wan Suk Yang , Yeong Su Cho
- 申请人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Morgan, Lewis & Bockius LLP
- 优先权: KR10-2019-0165449 20191212
- 主分类号: H01G9/012
- IPC分类号: H01G9/012 ; H01G9/00 ; H01G9/15 ; H01G9/042 ; H01G9/008
摘要:
A tantalum capacitor includes: a tantalum body having a tantalum wire exposed from one surface of the tantalum body; a molded portion including first and second surfaces opposing in a thickness direction, third and fourth surfaces opposing in a width direction, and fifth and sixth surfaces opposing in a longitudinal direction, the molded portion surrounding the tantalum body; an anode lead frame including an anode connection member and an anode terminal, which are connected to the tantalum wire, exposed through the second surface of the molded portion; and a cathode lead frame spaced apart from the anode lead frame, and exposed through the second surface of the molded portion, wherein end portions of the tantalum wire, the anode connection member, and the anode terminal in the longitudinal direction are on a same plane.
公开/授权文献
- US20210183585A1 TANTALUM CAPACITOR AND MANUFACTURING METHOD THEREOF 公开/授权日:2021-06-17
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