- Patent Title: Method of forming a multilayer substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
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Application No.: US16750753Application Date: 2020-01-23
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Publication No.: US11313037B2Publication Date: 2022-04-26
- Inventor: Wen-Qing Xu , Chao Liu , Giovanni Barbarossa , Thomas E. Anderson , Elgin E. Eissler
- Applicant: II-VI Delaware, Inc.
- Applicant Address: US DE Wilmington
- Assignee: II-VI Delaware, Inc.
- Current Assignee: II-VI Delaware, Inc.
- Current Assignee Address: US DE Wilmington
- Agency: Blank Rome LLP
- Main IPC: C23C16/27
- IPC: C23C16/27 ; C23C16/01 ; C23C16/02 ; C23C16/56

Abstract:
A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)≤100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.
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