- 专利标题: Latch-type charge pump
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申请号: US16997299申请日: 2020-08-19
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公开(公告)号: US11309793B2公开(公告)日: 2022-04-19
- 发明人: Rashid Iqbal
- 申请人: Ferroelectric Memory GmbH
- 申请人地址: DE Dresden
- 专利权人: Ferroelectric Memory GmbH
- 当前专利权人: Ferroelectric Memory GmbH
- 当前专利权人地址: DE Dresden
- 代理机构: Hickman Becker Bingham Ledesma LLP
- 代理商 Malgorzata A. Kulczycka
- 主分类号: H02M3/07
- IPC分类号: H02M3/07 ; H03K17/687 ; H02M1/00
摘要:
According to various aspects, a latch-type charge pump may include: an input node and an output node; a first charge storage and a second charge storage coupled in parallel to each other, a first switch coupled to the input node and a second switch coupled to the output node, wherein the first charge storage couples the first switch with the second switch; and a control circuit configured to control the first switch based on a state of the second charge storage, and to control the second switch based on a state of the first charge storage.
公开/授权文献
- US20220060105A1 LATCH-TYPE CHARGE PUMP 公开/授权日:2022-02-24
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