Invention Grant
- Patent Title: Process, reactor and system for fabrication of free-standing two-dimensional nanostructures using plasma technology
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Application No.: US16300611Application Date: 2017-05-11
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Publication No.: US11254575B2Publication Date: 2022-02-22
- Inventor: Elena Stefanova Tatarova , Julio Paulo Dos Santos Duarte Vieira Henriques , Luis Paulo Da Mota Capitao Lemos Alves , Bruno Miguel Soares Goncalves
- Applicant: INSTITUTO SUPERIOR TECNICO
- Applicant Address: PT Lisbon
- Assignee: INSTITUTO SUPERIOR TECNICO
- Current Assignee: INSTITUTO SUPERIOR TECNICO
- Current Assignee Address: PT Lisbon
- Agency: Porzio Bromberg & Newman P.C.
- Priority: PT109387 20160513
- International Application: PCT/PT2017/000007 WO 20170511
- International Announcement: WO2017/196198 WO 20171116
- Main IPC: C01B32/184
- IPC: C01B32/184 ; B01J12/00 ; H05H1/46 ; B82Y30/00 ; B82Y40/00

Abstract:
The present invention relates to a process, reactor and system to produce self-standing two-dimensional nanostructures, using a microwave-excited plasma environment. The process is based on injecting, into a reactor, a mixture of gases and precursors in stream regime. The stream is subjected to a surface wave electric field, excited by the use of microwave power which is introduced into a field applicator, generating high energy density plasmas, that break the precursors into its atomic and/or molecular constituents. The system comprises a plasma reactor with a surface wave launching zone, a transient zone with a progressively increasing cross-sectional area, and a nucleation zone. The plasma reactor together with an infrared radiation source provides a controlled adjustment of the spatial gradients, of the temperature and the gas stream velocity.
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