发明授权
- 专利标题: Gate driver circuit
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申请号: US16949285申请日: 2020-10-23
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公开(公告)号: US11245392B1公开(公告)日: 2022-02-08
- 发明人: Yi-Feng Hsia , Tai-Hua Chen , Kinam Song
- 申请人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 申请人地址: US AZ Phoenix
- 专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理机构: AMPACC Law Group, PLLC
- 主分类号: H03K17/081
- IPC分类号: H03K17/081 ; H03K17/16
摘要:
An electronic circuit includes a gate driver circuit. The gate driver circuit receives an input signal and a signal corresponding to a current through a switch, and produces, using the input signal, an output signal for controlling the switch. In response to the input signal being de-asserted, the gate driver circuit may turn the switch off at a normal turn-off rate when the current through the switch is less than an overcurrent (OC) threshold, and at an OC turn-off rate that is slower than the normal turn-off rate when the current through the switch is greater than the OC threshold.
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