- 专利标题： Method for manufacturing a donor substrate for making optoelectronic devices
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申请号： US16487037申请日： 2018-02-26
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公开(公告)号： US11245050B2公开(公告)日： 2022-02-08
- 发明人: David Sotta
- 申请人： Soitec
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 代理机构： TraskBritt
- 优先权： FR1751666 20170301
- 国际申请： PCT/FR2018/050446 WO 20180226
- 国际公布： WO2018/158529 WO 20180907
- 主分类号： H01L33/12
- IPC分类号： H01L33/12 ; H01L33/00 ; H01L21/02 ; H01L21/324
摘要：
A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.
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