发明授权
- 专利标题： Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end
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申请号： US16502783申请日： 2019-07-03
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公开(公告)号： US11244999B2公开(公告)日： 2022-02-08
- 发明人: Martin M. Frank , Takashi Ando , Xiao Sun , Jin Ping Han , Vijay Narayanan
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Michael J. Chang, LLC
- 代理商 Randall Bluestone
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L27/11507 ; H01L21/3213 ; H01L21/02 ; H01L21/283 ; H01B3/10
摘要：
Artificial synaptic devices with an HfO2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400° C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.
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