- 专利标题： Method and equipment for forming gaps in a material layer
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申请号： US15843185申请日： 2017-12-15
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公开(公告)号： US11244856B2公开(公告)日： 2022-02-08
- 发明人: Chan-Syun David Yang , Li-Te Lin , Yu-Ming Lin
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/768 ; H01L21/67 ; H01L21/683
摘要：
A method and equipment for forming gaps in a material layer are provided. The equipment includes a supporter and an etching device. The supporter is configured to support a semiconductor device. In the method for forming gaps in a material layer, at first, the semiconductor device is provided. Then, a material layer of the semiconductor device is etched to form vertical gaps in the material layer. Thereafter, the vertical sidewall of each of the vertical gaps is etched in accordance with a predetermined gap profile by using directional charged particle beams. The directional charged particle beams are provided by the etching device, and each of the directional charged particle beams has two energy peaks.
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