- 专利标题: On integrated circuit (IC) device simultaneously formed capacitor and resistor
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申请号: US16686942申请日: 2019-11-18
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公开(公告)号: US11244850B2公开(公告)日: 2022-02-08
- 发明人: Jim Shih-Chun Liang , Baozhen Li , Chih-Chao Yang
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: ZIP Group PLLC
- 主分类号: H01L21/70
- IPC分类号: H01L21/70 ; H01L49/02 ; H01L27/01
摘要:
An IC device includes a simultaneously formed capacitor and resistor structure. The capacitor and resistor may be located between a Back End of the Line (BEOL) interconnect stack and an external device interconnect pad of the IC device. The resistor may be used to step down a voltage applied across the resistor. The resistor may include one or more resistor plates that are formed simultaneously with a respective one or more plates of the capacitor. For example, a capacitor plate and a resistor plate may be patterned and formed from the same conductive sheet. Each of the resistor plates may be connected to one or more vertical interconnect accesses (VIA).
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