- 专利标题： Process gas supply apparatus and wafer treatment system including the same
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申请号： US16902771申请日： 2020-06-16
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公开(公告)号： US11244837B2公开(公告)日： 2022-02-08
- 发明人: Ki Yung Lee , Seung Bae Lee
- 申请人： SEMES CO., LTD.
- 申请人地址： KR Chungcheongnam-do
- 专利权人： SEMES CO., LTD.
- 当前专利权人： SEMES CO., LTD.
- 当前专利权人地址： KR Chungcheongnam-do
- 代理机构： RatnerPrestia
- 优先权： KR10-2019-0073591 20190620
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/306 ; B01J4/00
摘要：
Provided are a process gas supply apparatus which supplies a process gas onto a wafer to etch an oxide layer by dividing an edge zone into a first zone and a second zone located outside the first zone and dividing the second zone into a plurality of sub-zones and a wafer treatment system including the process gas supply apparatus.
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