- 专利标题: Semiconductor device
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申请号: US16961779申请日: 2018-12-03
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公开(公告)号: US11201130B2公开(公告)日: 2021-12-14
- 发明人: Hirotaka Oomori , Takashi Tsuno
- 申请人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址: JP Osaka
- 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP Osaka
- 代理机构: IPUSA, PLLC
- 优先权: JPJP2018-010262 20180125
- 国际申请: PCT/JP2018/044399 WO 20181203
- 国际公布: WO2019/146260 WO 20190801
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
A semiconductor device includes a base plate; a metal plate above the base plate; a bonding material between the base plate and metal plate, bonding the metal plate to the base plate; an insulating plate on the metal plate; a circuit member on the insulating plate; a semiconductor element mounted on the circuit member; and a sealing material to seal a space on the base plate. The metal plate includes a bottom surface area along a periphery, exposed from the bonding material. The base plate includes a groove-shaped first recess formed along the periphery of the metal plate and faces the bottom surface area. The base plate also includes a groove-shaped second recess that is spaced apart from the first recess and that is formed on the inner side relative to the first recess. The bonding material is disposed in at least a part of the second recess.
公开/授权文献
- US20210066235A1 SEMICONDUCTOR DEVICE 公开/授权日:2021-03-04
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