- 专利标题: Shunt resistor averaging techniques
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申请号: US16539404申请日: 2019-08-13
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公开(公告)号: US11193957B2公开(公告)日: 2021-12-07
- 发明人: Hio Leong Chao
- 申请人: Analog Devices International Unlimited Company
- 申请人地址: IE Limerick
- 专利权人: Analog Devices International Unlimited Company
- 当前专利权人: Analog Devices International Unlimited Company
- 当前专利权人地址: IE Limerick
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: G01R15/14
- IPC分类号: G01R15/14 ; G01R1/30 ; H01L23/528 ; H01L23/522 ; H03F3/45 ; G01R19/25
摘要:
Techniques for improving current sensing via a shunt resistance are provided. In an example, an apparatus for sensing current can include a substrate, and a plurality of metal layers stacked on the substrate and separated from the substrate and from each other by an insulation material. In certain examples, a first one or more metal layers can form a sense resistance configured to pass current between a source and a load, and a second one or more metal layers can form one or more gain resistances coupled to the sense resistance and configured to couple to a current sense amplifier. In some example, a metal layer can include portions of both the sense resistance and the gain resistance to compensate for environmental anomalies, material anomalies or manufacturing anomalies.
公开/授权文献
- US20210048453A1 SHUNT RESISTOR AVERAGING TECHNIQUES 公开/授权日:2021-02-18
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