- 专利标题: Storage devices including a plurality of planes and methods of operating the storage devices
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申请号: US16546598申请日: 2019-08-21
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公开(公告)号: US11182301B2公开(公告)日: 2021-11-23
- 发明人: Jin-oh Ahn , Hyun-wook Shin , Walter Jun
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2018-0137599 20181109
- 主分类号: G06F12/0882
- IPC分类号: G06F12/0882 ; G06F3/06 ; G06F12/02 ; G11C11/56
摘要:
In a method of operating a storage device including a non-volatile memory (NVM), the non-volatile memory including a memory cell array, the memory cell array including a first plane and a second plane, the method includes receiving a read command set for data sensing of the first and second plane; simultaneously loading first page data stored in the first plane into a first page buffer of the first plane and second page data stored in the second plane into a second page buffer of the second plane based on the read command set; receiving a data output command set that includes the first plane; and continuously transmitting the first page data and the second page databased on the data output command set.
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