A thin film transistor includes: a substrate base; a first gate electrode at a side of the substrate base; an active layer at a side of the first gate electrode away from the substrate base; a second gate electrode at a side of the active layer away from the substrate base; and a source/drain electrode at a side of the second gate electrode away from the substrate base. An orthographic projection of the source/drain electrode on the substrate base is at least partially overlapped with an orthographic projection of the second gate electrode on the substrate base.