- 专利标题: Method of controlling initialization of nonvolatile memory device and memory system including nonvolatile memory device
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申请号: US16835922申请日: 2020-03-31
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公开(公告)号: US11132312B2公开(公告)日: 2021-09-28
- 发明人: Jinyoung Kim , Jaeduk Yu
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2019-0121430 20191001
- 主分类号: G11C11/56
- IPC分类号: G11C11/56 ; G06F13/16 ; G06F11/07 ; G01R31/28 ; G11C7/20
摘要:
To control initialization of a nonvolatile memory device, before assembling a memory system including a first nonvolatile memory device and a second nonvolatile memory device, information data for initialization of the first nonvolatile memory device are stored in the first nonvolatile memory device. After assembling the memory system, the information data are moved from the first nonvolatile memory device to the second nonvolatile memory device. The first nonvolatile memory device is initialized based on the information data stored in the second nonvolatile memory device. An initialization time of the first nonvolatile memory device is reduced efficiently by moving the information data from the first nonvolatile memory device to the second nonvolatile memory device having the rapid speed of the reading operation and using the information data read from the second nonvolatile memory device.
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