A semiconductor storage device of the embodiment includes a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked, the stacked body including a stepped portion in which ends of the plurality of conductive layers are stepped, a pillar penetrating the stacked body, the pillar having a memory cell at a height position of each of the plurality of conductive layers, a contact disposed at the stepped portion, the contact being connected to an n-th conductive layer when counted from a lowermost conductive layer of the plurality of conductive layers, and a region in an (n−1)th conductive layer when counted from the lowermost conductive layer of the plurality of conductive layers, the region being disposed at a position below the contact, the region being insulated from the (n−1)th conductive layer surrounding a periphery.