Invention Grant
- Patent Title: High performance thermoelectric device and method of manufacturing the same at ultra-high speed
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Application No.: US16657080Application Date: 2019-10-18
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Publication No.: US11101420B2Publication Date: 2021-08-24
- Inventor: Jiaqing He , Yi Zhou , Liangwei Fu , Yuexing Chen , Dan Feng
- Applicant: SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
- Applicant Address: CN Guangdong
- Assignee: SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
- Current Assignee: SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
- Current Assignee Address: CN Guangdong
- Agency: Hodgson Russ LLP
- Main IPC: H01L35/12
- IPC: H01L35/12 ; H01L35/04 ; H01L35/32

Abstract:
Disclosed are a high performance thermoelectric device and a method of manufacturing the same at ultra-high speed. The high performance thermoelectric device includes segmented structures which may provide an optimal match between the thermoelectric materials and the environmental temperature difference; blocking layers and stress-buffering layers which can reduce interface element migration and longitudinal contact thermal expansion stress and increase bonding strength; phonon scattering layers and negative thermal expansion buffering layers inserted and fixing the thermoelectric leg, thereby increasing internal thermal resistance and improving transverse thermo-match for the high performance thermoelectric device; an inner package and an outer package, thus avoiding sublimation and oxidation of the thermoelectric materials and providing the thermoelectric device with enhanced impact resistance from outside.
Public/Granted literature
- US20200152849A1 HIGH PERFORMANCE THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME AT ULTRA-HIGH SPEED Public/Granted day:2020-05-14
Information query
IPC分类: