Invention Grant
- Patent Title: Indium phosphide wafer having pits on the back side, method and etching solution for manufacturing the same
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Application No.: US16641538Application Date: 2018-06-29
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Publication No.: US11094549B2Publication Date: 2021-08-17
- Inventor: Liugang Wang , Haimiao Li , Sung-Nee George Chu
- Applicant: BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Current Assignee: BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201710612344.1 20170725
- International Application: PCT/CN2018/093629 WO 20180629
- International Announcement: WO2019/019859 WO 20190131
- Main IPC: H01L21/306
- IPC: H01L21/306 ; B24B37/08 ; C30B29/40 ; H01L29/30
Abstract:
A {100} indium phosphide (InP) wafer with pits distributed on the back side thereof, a method and an etching solution for manufacturing thereof are provided, wherein the pits on the back side have an elongated shape with a maximum dimension of the long axis of 65 μm, and the pits have a maximum depth of 6.0 μm. The {100} indium phosphide (InP) wafer has controllable pits distribution on the back side, thus provide a controllable emissivity of the wafer back side surface for better control of wafer back side heating during the epitaxial growth.
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