Invention Grant
- Patent Title: Gap-filling method
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Application No.: US16167568Application Date: 2018-10-23
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Publication No.: US11042093B2Publication Date: 2021-06-22
- Inventor: James F. Cameron , Keren Zhang , Li Cui , Daniel Greene , Shintaro Yamada
- Applicant: Rohm and Haas Electronic Materials LLC
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent Jonathan D Baskin
- Main IPC: G03F7/20
- IPC: G03F7/20 ; C08G61/10 ; G03F7/09

Abstract:
A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.
Public/Granted literature
- US20190146346A1 GAP-FILLING METHOD Public/Granted day:2019-05-16
Information query
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