Invention Grant
- Patent Title: Dual flux change layer (FCL) assisted magnetic recording
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Application No.: US16781631Application Date: 2020-02-04
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Publication No.: US11011193B1Publication Date: 2021-05-18
- Inventor: Yan Wu , Wenyu Chen , Shohei Kawasaki
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/31
- IPC: G11B5/31 ; G11B5/39 ; G11B5/60 ; G11B5/127 ; G11B5/245 ; G11B19/20 ; G11B5/00

Abstract:
A spin transfer torque reversal assisted magnetic recording (STRAMR) structure is disclosed wherein two flux change layers (FCL1 and FCL2) are formed within a write gap (WG) and between a main pole (MP) trailing side and trailing shield (TS). Each FCL has a magnetization that flips to a direction substantially opposing a WG field when a direct current of sufficient current density is applied across the STRAMR device thereby increasing reluctance in the WG and producing a larger write field output at the air bearing surface. A reference layer (RL1) is used to reflect spin polarized electrons that exert spin torque on FCL1 and cause FCL1 magnetization to flip. A second reference layer (or the MP or TS) is employed to reflect spin polarize electrons that generate spin torque on FCL2 and flip FCL2 magnetization. Non-spin polarization preserving layers and spin polarization preserving layers are also in the STRAMR structure.
Information query
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