An integrated circuit (IC) apparatus and a method of forming a conductive material in a backside of an IC are provided. The IC apparatus includes a substrate including a frontside and a backside; at least one first insulating material deposited in the backside of the substrate in a form of a trench; a conductive material deposited in each of the at least one first insulating material; at least one second insulating material deposited on the conductive material to insulate the conductive material from the substrate; an epitaxial crystalline material grown on the frontside of the substrate; at least one semiconductor component formed in the epitaxial crystalline material; and at least one via formed in the substrate to connect the conductive material to the at least one semiconductor component.