- 专利标题: Method of forming tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head
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申请号: US16916410申请日: 2020-06-30
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公开(公告)号: US10984824B2公开(公告)日: 2021-04-20
- 发明人: Urmimala Roy , Yan Wu
- 申请人: Headway Technologies, Inc.
- 申请人地址: US CA Milpitas
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; G11B5/31
摘要:
A junction shield (JS) structure and method of forming the same are disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside at a stripe height (SH) from the ABS. The JS structure has a lower layer (JS1) with magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without decreasing amplitude for a reader with low AR. The JS1 layer may be antiferromagnetically coupled to an upper JS layer for stabilization.
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