There is provided a method of forming a semiconductor film, including: a first process of supplying a first semiconductor raw material gas onto a substrate having recesses formed therein to form a first semiconductor film in each of the recesses, each of the recesses being covered with an insulating film; a second process of supplying a halogen-containing etching gas onto the substrate to etch the first semiconductor film while exposing a surface of the insulating film in an upper portion of an inner wall of each of the recesses and leaving the first semiconductor film formed on a bottom surface of each of the recesses; and a third process of simultaneously supplying a halogen-containing semiconductor gas and a semiconductor hydride gas onto the substrate to form a second semiconductor film on the first semiconductor film formed on the bottom surface of each of the recesses.