A method of manufacturing a semiconductor structure is provided. The method includes: providing a substrate including an electrical component; forming a capacitor structure in the substrate, proximal to a heterogeneous interface of the substrate, and physically and electrically isolated from the electrical component; forming a conductive terminal over and electrically connected with the capacitor structure; and contacting the conductive terminal with a probe to measure an electrical parameter of the capacitor structure, wherein the electrical parameter corresponds to a humidity permeability at the heterogeneous interface. A semiconductor structure thereof is also provided.