- 专利标题： Semiconductor device
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申请号： US16476503申请日： 2017-04-25
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公开(公告)号： US10937733B2公开(公告)日： 2021-03-02
- 发明人: Takeshi Miura
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 国际申请： PCT/JP2017/016385 WO 20170425
- 国际公布： WO2018/198199 WO 20181101
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/00 ; H01L23/522 ; H01L23/532
摘要：
An insulating film (2) is provided on a base material (1). The insulating film (2) is a compressive film in which a stress is applied in a direction of peeling away from the base material at a central portion. A recess (3) is formed in the central portion of the insulating film (2) so that a thickness is partially reduced.
公开/授权文献
- US20200051910A1 SEMICONDUCTOR DEVICE 公开/授权日：2020-02-13
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