- 专利标题： Mixed workfunction metal for nanosheet device
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申请号： US16590177申请日： 2019-10-01
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公开(公告)号： US10937704B1公开(公告)日： 2021-03-02
- 发明人: Kuo-Cheng Chiang , Chung-Wei Hsu , Lung-Kun Chu , Jia-Ni Yu , Chih-Hao Wang , Mao-Lin Huang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L21/3213
摘要：
A method includes depositing a first conductive material on a first-type channel stack and a second-type channel stack, the first conductive material having a first workfunction, the first conductive material being formed between multiple layers of both the first-type channel stack and the second-type channel stack. The method further includes partially removing the first conductive material from the second-type channel stack such that the first conductive material remains between the multiple layers of both the first-type channel stack and the second-type channel stack and fully removing the first conductive material from the second-type channel stack. The method further includes depositing a second conductive material over both the first-type channel stack and the second-type channel stack such that the second conductive material covers both the first-type channel stack and the first conductive material in between the layers of the first-type channel stack, the second conductive material having a second workfunction that is different than the first workfunction.
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