- 专利标题: Substrate solution-treatment apparatus, treatment solution supplying method and storage medium
-
申请号: US15989744申请日: 2018-05-25
-
公开(公告)号: US10937669B2公开(公告)日: 2021-03-02
- 发明人: Kosuke Fukuda , Mikio Nakashima , Kazuyoshi Shinohara , Hiroyuki Higashi
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权: JPJP2017-108689 20170531
- 主分类号: H01L21/67
- IPC分类号: H01L21/67
摘要:
A substrate solution-treatment apparatus includes: a substrate holding part for holding a substrate; a nozzle for supplying a treatment solution onto the substrate; a supply line; a flow rate control mechanism including a flow rate meter and a flow rate control valve installed in the supply line; an opening/closing valve installed in the supply line; and a control part for controlling operations of the flow rate control mechanism and the opening/closing valve. The flow rate control mechanism controls the flow rate control valve such that a detection value of the flow rate meter coincides with a flow rate target value provided from the control part. The control part controls the nozzle to supply the treatment solution onto the substrate with the opening/closing valve opened, and provides a first flow rate as the flow rate target value to the flow rate control mechanism.
公开/授权文献
信息查询
IPC分类: