In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion 61, an insulating portion 62, and a main surface 6, and a surface 61a of the metal portion 61 and a surface 62a of the insulating portion 62 are exposed on the main surface 6 side, the method MT includes: a step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; a step S2 of starting supplying O2 gas into the processing chamber 4; and a step S3 of generating a plasma in the processing chamber 4 by the gas in the processing chamber 4 containing a SiF4 gas by supplying the SiF4 gas and plasma generation high-frequency power into the processing chamber 4, the plasma generated in the step S3 contains deposition species and etching species, and, in the plasma generated in the step S3, a proportion occupied by the etching species is greater than a proportion occupied by the deposition species.