- 专利标题： Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes
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申请号： US16142208申请日： 2018-09-26
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公开(公告)号： US10937620B2公开(公告)日： 2021-03-02
- 发明人: Joshua T. Smith , Benjamin Wunsch
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Anthony Curro
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01J21/10 ; H01J1/304 ; H01L21/3215 ; H01L29/417
摘要：
A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.
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