- 专利标题： Semiconductor device
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申请号： US16458670申请日： 2019-07-01
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公开(公告)号： US10910489B2公开(公告)日： 2021-02-02
- 发明人: Masaaki Onomura
- 申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址： JP Minato-ku; JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址： JP Minato-ku; JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2019-041385 20190307
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/15 ; H01L29/20 ; H01L29/205 ; H01L29/423 ; H01L21/02 ; H01L29/66
摘要：
A semiconductor device according to an embodiment includes: a substrate; a first nitride semiconductor layer that is provided above the substrate, has a first lattice period in a first direction parallel to a substrate plane, and includes nitrogen and aluminum; a second nitride semiconductor layer that is provided between the substrate and the first nitride semiconductor layer and includes nitrogen and aluminum and of which at least a portion has a second lattice period that is three times the first lattice period in the first direction parallel to the substrate plane; a third nitride semiconductor layer provided above the first nitride semiconductor layer; a fourth nitride semiconductor layer that is provided on the third nitride semiconductor layer and has a larger bandgap than the third nitride semiconductor layer; at least one main electrode provided on the fourth nitride semiconductor layer; and a control electrode provided above the third nitride semiconductor layer, the control electrode being configured to control a current of the semiconductor device.
公开/授权文献
- US20200287035A1 SEMICONDUCTOR DEVICE 公开/授权日：2020-09-10
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