发明授权
- 专利标题： Methods and apparatus for smoothing dynamic random access memory bit line metal
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申请号： US16690620申请日： 2019-11-21
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公开(公告)号： US10903112B2公开(公告)日： 2021-01-26
- 发明人: Priyadarshi Panda , Jianxin Lei , Sanjay Natarajan , In Seok Hwang , Nobuyuki Sasaki
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser Taboada
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/285 ; H01L21/02
摘要：
A process of smoothing a top surface of a bit line metal of a memory structure decreases resistance of a bit line stack. The process includes depositing a titanium layer of approximately 30 angstroms to 50 angstroms on a polysilicon layer on a substrate, depositing a first titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the titanium layer, annealing the substrate at a temperature of approximately 700 degrees Celsius to approximately 850 degrees Celsius, depositing a second titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the first titanium nitride layer after annealing, and depositing a bit line metal layer of ruthenium on the second titanium nitride layer.
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