- 专利标题: Manufacturing method of semiconductor device
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申请号: US15664367申请日: 2017-07-31
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公开(公告)号: US10861733B2公开(公告)日: 2020-12-08
- 发明人: Masakatsu Ohno , Seiji Yasumoto , Naoki Ikezawa , Satoru Idojiri , Shunpei Yamazaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JP2016-156143 20160809
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/683 ; H01L21/78 ; H01L21/48 ; H01L29/66 ; H01L29/786 ; H01L21/02 ; G02F1/1335 ; G02F1/1343 ; G02F1/1368 ; H01L27/32 ; H01L51/00 ; H01L51/56
摘要:
The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.
公开/授权文献
- US20180047609A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日:2018-02-15
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