Invention Grant
- Patent Title: Method for fabricating thin film transistor substrate
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Application No.: US16273374Application Date: 2019-02-12
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Publication No.: US10854645B2Publication Date: 2020-12-01
- Inventor: Jun Hee Lee , Sung Hoon Moon , Dong Hyun Son , Pil Soo Ahn , Kohei Ebisuno , Sang Hoon Oh
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-si
- Agency: Kile Park Reed & Houtteman PLLC
- Priority: KR10-2018-0017763 20180213
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L29/786 ; H01L51/00 ; H01L51/56
Abstract:
A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.
Public/Granted literature
- US20190252420A1 METHOD FOR FABRICATING THIN FILM TRANSISTOR SUBSTRATE Public/Granted day:2019-08-15
Information query
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